Fault Detection and Analysis in SRAM through Self Refreshing Operation

Authors

DOI:

https://doi.org/10.4108/eetsis.4025

Keywords:

SRAM memory, Single Event Upset, soft error, (74) Hamming code, SECDED

Abstract

Numerous soft faults in SRAM memory emerge as technological innovations scales down, resulting in single and several cell upsets. The increased use of transistors in space applications has rendered semiconductor devices more vulnerable to soft errors caused by harm from radiation. A single event upset (SEU) is occurring whenever a soft error produces a tiny bit flipped in a storage device. Because SEU faults affect system performance, they must be addressed as soon as possible. Error-correcting codes, like the method known as (7,4) hamming codes, were devised and their decoding and encoding procedures were verified. It also used to detect single errors that can be fixed. It also helps detect double errors, SECDED however repair of double errors is tough. The decoding and encoding techniques of these approaches were investigated, and all computational findings had been verified and executed in a Xilinx NEXYS 4 DDR FPGA board.

References

M. S. M. Siddiqui, S. Ruchi, L. Van Le, T. Yoo, I. -J. Chang and T. T. -H. Kim, "SRAM Radiation Hardening Through Self-Refresh Operation and Error Correction," in IEEE Transactions on Device and Materials Reliability, vol. 20, no. 2, pp. 468-474, June 2020.

L. A. Aranda, O. Ruano, F. Garcia-Herrero and J. A. Maestro, "Reliability Analysis of ASIC Designs With Xilinx SRAM-Based FPGAs," in IEEE Access, vol. 9, pp. 140676-140685, 2021.

Gracia-Morán, L. J. Saiz-Adalid, D. Gil-Tomás and P. J. Gil- Vicente, "Improving Error Correction Codes for Multiple-Cell Upsets in Space Applications," in IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 26, no. 10, pp. 2132-2142, Oct. 2018.

Ibe, H. Taniguchi, Y. Yahagi, K. -i. Shimbo and T. Toba, "Impact of Scaling on Neutron-Induced Soft Error in SRAMs From a 250 nm to a 22 nm Design Rule," in IEEE Transactions on Electron Devices, vol. 57, no. 7, pp. 1527-1538, July 2010.

K. Jamal and Dr. P. Srihar et al., “Test Vector Generation using Genetic Algorithm for Fault Tolerant Systems” International Journal of Control Theory and Applications (IJCTA), 9(12), pp. 5591-5598, May 2016.

R. C. Baumann, “Radiation-induced soft errors in advanced semiconductor technologies,” IEEE Trans. Device Mater. Rel., vol. 5, no. 3, pp. 305–316, Sep. 2005.

K. Rahul and S. Yachareni, "Low Power and Area efficient Forward Error correction code for SRAM in FPGAs," 2020 8th International Electrical Engineering Congress (iEECON), Chiang Mai, Thailand, 2020, pp. 1-4.

S. Manoj and C. Babu, "Improved error detection and correction for memory reliability against multiple cell upsets using DM C PMC”, IEEE Annual India Conference (INDICON), Bangalore, pp. 1 - 6, December 2016.

Ming Zhu and Liyi Xiao and Shuhao Li et al., (2010) “Efficient Two-Dimensional Error Codes for Multiple Bit Upsets Mitigation in Memory”. In Defect and Fault Tolerance in VLSI Systems (DFT), IEEE 25th International Symposium on, pages 129– 135.

Y. Kawakami, “Investigation of soft error rate including multi-bit upsets in advanced SRAM using neutron irradiation test and 3D mixed-mode device simulation”, Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International.

Vinotha, P., Jose, D. (2020). VLSI Implementation of Image Encryption Using DNA Cryptography. In: Balaji, S., Rocha, Á., Chung, YN. (eds) Intelligent Communication Technologies and Virtual Mobile Networks. ICICV 2019. Lecture Notes on Data Engineering and Communications Technologies, vol 33. Springer, Cham. https://doi.org/10.1007/978-3-030-28364-3_17

Dhandapani, N., Mohamed Ashik, M.Z., Bhargav, K.R., Achyuth, N., Jose, D. (2023). VLSI Implementation of BCH Encoder with Triple DES Encryption for Baseband Transceiver. In: Marriwala, N., Tripathi, C., Jain, S., Kumar, D. (eds) Mobile Radio Communications and 5G Networks. Lecture Notes in Networks and Systems, vol 588. Springer, Singapore.

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Published

29-09-2023

How to Cite

1.
Nirmalkumar P, Mythily K, Jose D, Arun Kumar B. Fault Detection and Analysis in SRAM through Self Refreshing Operation. EAI Endorsed Scal Inf Syst [Internet]. 2023 Sep. 29 [cited 2024 Jun. 23];11(3). Available from: https://publications.eai.eu/index.php/sis/article/view/4025